High-frequency switching of semiconductor power devices leads to dramatic miniaturisation of power converters with a potential for significant cost and size reduction of advanced energy conversion systems. However, high-frequency power switching also leads to increased switching power losses that could potentially result in significant degradation of power converter reliability.
The application-level reliability of a power converter is among the least understood topics today. There are no established guidelines that can be used to design a power converter in order to guarantee a certain mean-time-between-failures (MTBF) or mean-time-to-failures (MTTF).
This talk will discuss the current approach followed in industry for assessing the field-reliability of power converters and will outline a new approach that emphasises on physics-based component failure mechanisms.
Biography: Krishna Shenai earned his B. Tech. (electronics) degree from IIT-Madras in 1979, MS (EE) degree from the University of Maryland – College Park, Maryland (USA) in 1981, and PhD (EE) degree from Stanford University, Stanford, California (USA) in 1986.
For nearly 40 years, Dr. Shenai and his students have made seminal contributions to silicon and wide bandgap (WBG) power electronics technologies that have shaped the world-wide industry.
He is a Fellow of IEEE, a Fellow of American Association for the Advancement of Science (AAAS), a Fellow of the American Physical Society (APS), a member of Serbian Academy of Engineers, and is an Editor of IEEE J. Electron Devices Society (EDS). Dr. Shenai has authored over 400 peer-reviewed papers, 10 books, 9 book chapters, and holds 12 issued US patents.